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Zhaoqun Zhou

from Bedford, MA
Age ~57

Zhaoqun Zhou Phones & Addresses

  • Bedford, MA
  • Plainsboro, NJ
  • 407 5Th St, Ames, IA 50010

Work

Company: Qd vision, ma Jul 2009 Position: Group leader/senior device engineer

Education

School / High School: Iowa State University May 2007 Specialities: Ph.D. in Physics

Skills

PROCESS CONTROL EXPERIENCE: Led a process team working on weekly baseline device quality control (efficiency and lifetime); improved metal oxide thin film quality and device yield; standard process control (SPC) on large batch of tile device fabrication for project delivery; responsible for pilot production process (substrate clean; thin film coating; post annealing; polishing and dicing; etc.) and application. THIN FILM DEVICE FABRICATION: Knowledge of thin film emitting • photovoltaic and photo- detector device physics; research contributions in thin film device modeling and parameter extraction; understanding device degradation mechanisms • practical experience with characterization and analysis Skilled in architecture design of experiment (DOE) • fabrication and optimization of OLED and QLED devices • strong target-oriented observation • execution and troubleshooting skills Proficient in ultrasonic • UV-ozone • oxygen plasma cleaning • ITO photolithography pattern and thin film device package Adept in thermal evaporation • spin-coating • capillary coating • knife blading • sol-gel formulation • stamp printing transfer • E-beam evaporation • magnetron sputtering • atomic layer deposition (ALD) In charge of class 1000 and class 10000 clean room operation/device fabrication scheduling MATERIAL SCIENCE AND DEVICE CHARACTERIZATIONS: Strong understanding with material requirements for thin-film electroluminescence device • photo-detectors and solar cells; extensive practical experience with broad range of material characterization techniques • data analysis and interpretation skills Photoluminescence • electroluminescence and thin film spectroscopy Material and thin film characterization: AFM • SEM • XRD • XPS • UPS • TGA • profilometry • ellipsometry • kelvin probe measurement I-L-V • C-V • time of flight • device lifetime and EL transient characterization of devices Optimize OLED/QLED device performance using optical modeling software SETFOS Mechanical stress measurement in thin films • surface contact angle measurement DEVICE FAILURE AND STATISTICAL ANALYSIS: Qualitative analysis of process yield and process-related defects: extensive practical experience gained from R&D prototyping; practical experience with the analysis and characterization of thin-film devices; apply Failure Mode Effect Analysis (FEMA) to device design or fabrication/assembly process to ensure the end product meets its specifications or requirements • as well as to determine the effect of a single failure or event on the system. PROJECT MANAGEMENT: Manufacturing/engineering management in fast-paced • high-tech environments (project initiation • planning • managing complexities and competing priorities; executing and technology transferring to production and marketplace).

Resumes

Resumes

Zhaoqun Zhou Photo 1

Zhaoqun Zhou Massachusetts

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Work:
QD Vision, MA

Jul 2009 to 2000
Group Leader/Senior Device Engineer

QD Vision, MA

Mar 2007 to Sep 2009
Senior Device Engineer

AMES LABORATORY-US DOE, IOWA STATE UNIVERSITY
Ames, IA
2002 to 2007
Research Associate

INTEGRATED SENSOR TECHNOLOGY, Inc
Ames, IA
2004 to 2006
Technical Assistant

Education:
Iowa State University
May 2007
Ph.D. in Physics

Skills:
PROCESS CONTROL EXPERIENCE: Led a process team working on weekly baseline device quality control (efficiency and lifetime); improved metal oxide thin film quality and device yield; standard process control (SPC) on large batch of tile device fabrication for project delivery; responsible for pilot production process (substrate clean; thin film coating; post annealing; polishing and dicing; etc.) and application. THIN FILM DEVICE FABRICATION: Knowledge of thin film emitting, photovoltaic and photo- detector device physics; research contributions in thin film device modeling and parameter extraction; understanding device degradation mechanisms, practical experience with characterization and analysis Skilled in architecture design of experiment (DOE), fabrication and optimization of OLED and QLED devices, strong target-oriented observation, execution and troubleshooting skills Proficient in ultrasonic, UV-ozone, oxygen plasma cleaning, ITO photolithography pattern and thin film device package Adept in thermal evaporation, spin-coating, capillary coating, knife blading, sol-gel formulation, stamp printing transfer, E-beam evaporation, magnetron sputtering, atomic layer deposition (ALD) In charge of class 1000 and class 10000 clean room operation/device fabrication scheduling MATERIAL SCIENCE AND DEVICE CHARACTERIZATIONS: Strong understanding with material requirements for thin-film electroluminescence device, photo-detectors and solar cells; extensive practical experience with broad range of material characterization techniques, data analysis and interpretation skills Photoluminescence, electroluminescence and thin film spectroscopy Material and thin film characterization: AFM, SEM, XRD, XPS, UPS, TGA, profilometry, ellipsometry, kelvin probe measurement I-L-V, C-V, time of flight, device lifetime and EL transient characterization of devices Optimize OLED/QLED device performance using optical modeling software SETFOS Mechanical stress measurement in thin films, surface contact angle measurement DEVICE FAILURE AND STATISTICAL ANALYSIS: Qualitative analysis of process yield and process-related defects: extensive practical experience gained from R&D prototyping; practical experience with the analysis and characterization of thin-film devices; apply Failure Mode Effect Analysis (FEMA) to device design or fabrication/assembly process to ensure the end product meets its specifications or requirements, as well as to determine the effect of a single failure or event on the system. PROJECT MANAGEMENT: Manufacturing/engineering management in fast-paced, high-tech environments (project initiation, planning, managing complexities and competing priorities; executing and technology transferring to production and marketplace).
Zhaoqun Zhou Photo 2

Zhaoqun Zhou

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Publications

Us Patents

Device Including Quantum Dots And Method For Making Same

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US Patent:
2012029, Nov 22, 2012
Filed:
Mar 16, 2012
Appl. No.:
13/422683
Inventors:
ZHAOQUN ZHOU - Allston MA,
PETER T. KAZLAS - Sudbury MA,
BENJAMIN S. MASHFORD - Vic,
International Classification:
H01L 33/04
B82Y 99/00
US Classification:
257 13, 977773, 257E33005
Abstract:
A device comprises an anode; a cathode; a layer therebetween comprising quantum dots; and a first layer comprising a material capable of transporting and injecting electrons in, or forming, contact with the cathode, the material comprising nanoparticles of an inorganic semiconductor material. In one embodiment of the device, quantum dots comprise a core comprising a first semiconductor material that confines holes better than electrons in the core and an outer shell comprising a second semiconductor material that is permeable to electrons. In another embodiment of the device, the nanoparticles comprise n-doped inorganic semiconductor material, and a second layer comprising a material capable of transporting electrons is disposed between the layer including quantum dots and the first layer, wherein the second layer has a lower electron conductivity than the first. In a further embodiment of the device, the first layer is UV treated. A method and other embodiments are also disclosed.

Device Including Quantum Dots

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US Patent:
2014002, Jan 30, 2014
Filed:
Sep 30, 2013
Appl. No.:
14/042074
Inventors:
Craig Breen - Somerville MA,
Zhaoqun Zhou - Bedford MA,
Jonathan S. Steckel - Carlisle MA,
Assignee:
QD Vision, Inc. - Lexington MA
International Classification:
H01L 33/04
H01L 33/00
US Classification:
257 13, 438 47
Abstract:
A method for making a device, the method comprising: depositing a layer comprising quantum dots over a first electrode, the quantum dots including ligands attached to the outer surfaces thereof; treating the surface of the deposited layer comprising quantum dots to remove the exposed ligands; and forming a device layer thereover. Also disclosed is a device made in accordance with the disclosed method. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, and a layer comprising quantum dots between the two electrodes, the layer comprising quantum dots deposited from a dispersion that have been treated to remove exposed ligands after formation of the layer in the device. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, a layer comprising a first inorganic semiconductor material disposed between the first and second electrodes, and a plurality of quantum dots disposed between the first and second electrodes, the outer surface of the quantum dots comprising a second inorganic semiconductor material, wherein the composition of the first inorganic semiconductor material and the second inorganic semiconductor material is the same (without regard to any ligands on the outer surface of the quantum dot).

Light-Emitting Device Including Quantum Dots

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US Patent:
2011014, Jun 16, 2011
Filed:
Oct 2, 2010
Appl. No.:
12/896856
Inventors:
Zhaoqun ZHOU - Allston MA,
Peter T. Kazlas - Sudbury MA,
Mead Misic - Medford MA,
Zoran Popovic - Mississauga,
John Spencer Morris - Dodge City KS,
International Classification:
H01L 33/04
B82Y 99/00
US Classification:
257 13, 257E33008, 977774, 977950
Abstract:
A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/λ, wherein λ represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.
Zhaoqun Zhou from Bedford, MA, age ~57 Get Report